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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 8.8A 13Pin IMS-224681+$376.975810+$367.141650+$359.6021100+$356.9796200+$355.0128500+$352.39041000+$350.75142000+$349.1123 -
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Category: IGBTtransistorDescription: VISHAY VS-CPV364M4KPBF Insulated metal material power module57551+$297.682110+$289.916550+$283.9628100+$281.8920200+$280.3389500+$278.26811000+$276.97382000+$275.6795 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.28471+$250.899010+$244.353850+$239.3358100+$237.5904200+$236.2814500+$234.53601000+$233.44512000+$232.3542
